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SSM2317 Datasheet(PDF) 3 Page - Analog Devices |
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SSM2317 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 20 page  SSM2317 Rev. A | Page 3 of 20 SPECIFICATIONS VDD = 5.0 V, TA = 25°C, RL = 8 Ω + 33 μH, ALC = off, unless otherwise noted. Table 1. Parameter Symbol Conditions Min Typ Max Unit DEVICE CHARACTERISTICS Output Power PO RL = 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.42 W RL = 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.72 W RL = 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.77 W RL = 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.91 W RL = 4 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 2.53 W RL = 4 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.27 W RL = 4 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 3.161 W RL = 4 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.59 W RL = 3 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 3.111 W RL = 3 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.55 W RL = 3 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 3.891 W RL = 3 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.94 W Efficiency η PO = 1.4 W, 8 Ω, VDD = 5.0 V 93 % Total Harmonic Distortion + Noise THD + N PO = 1 W into 8 Ω, f = 1 kHz, VDD = 5.0 V 0.02 % PO = 0.5 W into 8 Ω, f = 1 kHz, VDD = 3.6 V 0.02 % Input Common-Mode Voltage Range VCM 1.0 VDD − 1.0 V Common-Mode Rejection Ratio CMRRGSM VCM = 2.5 V ± 100 mV at 217 Hz, output referred 57 dB Average Switching Frequency fSW 280 kHz Differential Output Offset Voltage VOOS Gain = 18 dB 2.0 mV POWER SUPPLY Supply Voltage Range VDD Guaranteed from PSRR test 2.5 5.5 V Power Supply Rejection Ratio PSRR VDD = 2.5 V to 5.0 V, dc input floating 70 85 dB PSRRGSM VRIPPLE = 100 mV at 217 Hz, inputs ac grounded, CIN = 0.1 μF 60 dB Supply Current (Typically, 170 μA Increase with ALC On) ISY VIN = 0 V, no load, VDD = 5.0 V 3.6 mA VIN = 0 V, no load, VDD = 3.6 V 3.2 mA VIN = 0 V, no load, VDD = 2.5 V 2.7 mA VIN = 0 V, load = 8 Ω + 33 μH, VDD = 5.0 V 3.7 mA VIN = 0 V, load = 8 Ω + 33 μH, VDD = 3.6 V 3.3 mA VIN = 0 V, load = 8 Ω + 33 μH, VDD = 2.5 V 2.8 mA Shutdown Current ISD SD = GND 20 nA GAIN CONTROL Closed-Loop Gain Gain 18 dB Differential Input Impedance ZIN SD = VDD 10 kΩ SD = GND 10 kΩ SHUTDOWN CONTROL Input Voltage High VIH ISY ≥ 1 mA 1.2 V Input Voltage Low VIL ISY ≤ 300 nA 0.5 V Wake-Up Time tWU SD rising edge from GND to VDD 28 ms Shutdown Time tSD SD falling edge from VDD to GND 5 μs Output Impedance ZOUT SD = GND >100 kΩ |
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