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STD12NE06 Datasheet(PDF) 3 Page - STMicroelectronics |
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STD12NE06 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =30 V ID =6 A RG =4.7 Ω VGS =10 V (see t est circuit, f igure 3) 10 35 15 50 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD =40 V ID =12 A VGS =10 V 20 5 7 30 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tr(Voff) tf tc Off -volt age Rise T ime Fall T ime Cross-over Time VDD =48 V ID =12 A RG =4.7 Ω VGS =10 V (see t est circuit, f igure 5) 7 18 30 10 25 45 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 12 48 A A VSD ( ∗)Forward On Voltage ISD =12 A VGS =0 1. 5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A di/dt = 100 A/ µs VDD =30 V T j = 150 o C (see t est circuit, f igure 5) 70 0.21 6 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STD12NE06 3/10 |
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