2N3055_08 datasheet(3/7 Pages) STMICROELECTRONICS

Part #	2N3055

Description	Complementary power transistors

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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2N3055 MJ2955

Electrical characteristics

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2

Electrical characteristics

(Tcase = 25°C; unless otherwise specified)

Table 3.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICEX

Collector cut-off current

(VBE = -1.5 V)

VCE = 100 V

TC = 150

oC

1

5

mA

ICEO

Collector cut-off current

(IB = 0)

VCE = 30 V

0.7

mA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 7 V

5mA

VCEO(sus)

(1)

1.

Pulsed : Pulse duration = 300 µs, duty cycle

≤1.5%

Note:

For PNP type voltage and current values are negative

Collector-emitter sustaining

voltage (IB = 0)

IC = 200 mA

60

V

VCER(sus)

(1) Collector-emitter sustaining

voltage (RBE = 100 Ω)

IC = 200 mA

70

V

VCE(sat)

(1) Collector-emitter saturation

voltage

IC = 4 A

IB = 400 mA

IC = 10 A

IB = 3.3 A

1

3

V

VBE

(1)

Base-emitter voltage

IC = 4 A

VCE = 4 V

1.8

V

hFE

(1)

DC current gain

IC = 4 A

VCE = 4 V

IC = 10 A

VCE = 4 V

20

5

70

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