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STB85NF55L Datasheet(PDF) 3 Page - STMicroelectronics |
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STB85NF55L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STB85NF55L STP85NF55L SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 27.5 V ID = 40 A RG = 4.7 Ω VGS = 5 V (Resistive Load, Figure 3) 35 165 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=27.5V ID=80A VGS=5V (see test circuit, Figure 4) 80 20 45 110 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 27.5 V ID = 40 A RG = 4.7Ω, VGS = 5 V (Resistive Load, Figure 3) 70 55 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 80 320 A A VSD (*) Forward On Voltage ISD = 80 A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A di/dt = 100A/µs VDD = 20 V Tj = 150°C (see test circuit, Figure 5) 80 240 6 ns nC A Thermal Impedance ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area |
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