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STB80NE03L-06 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. STB80NE03L-06
Description  N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET™ POWER MOSFET
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB80NE03L-06 Datasheet(HTML) 1 Page - STMicroelectronics

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February 2003
STB80NE03L-06
STB80NE03L-06-1
N-CHANNEL 30V - 0.005
Ω -80A D2PAK / I2PAK
STripFET™ POWER MOSFET
(1) ISD ≤804A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
s
TYPICAL RDS(on) = 0.005 Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
LOW GATE CHARGE 100°C
s
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
“Single
Feature
Size™” strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL,AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STB80NE03L-06
STB80NE03L-06-1
30 V
30 V
< 0.006
< 0.006
80 A
80 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS =0)
30
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
30
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuos) at TC = 25°C
80
A
ID
Drain Current (continuos) at TC = 100°C
60
A
IDM ( )
Drain Current (pulsed)
320
A
PTOT
Total Dissipation at TC = 25°C
150
W
Derating Factor
1
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns
Tstg
Storage Temperature
–55 to175
°C
Tj
Max. Operating Junction Temperature
D2PAK
1
3
1
2
3
I2PAK
INTERNAL SCHEMATIC DIAGRAM


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