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STB70NF3LL Datasheet(PDF) 1 Page - STMicroelectronics

Part No. STB70NF3LL
Description  N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB70NF3LL Datasheet(HTML) 1 Page - STMicroelectronics

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STB70NF3LL
N-CHANNEL 30V - 0.008
Ω - 70A D2PAK
LOW GATE CHARGE STripFET
™ POWER MOSFET
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.01
Ω @ 4.5V
s
OPTIMAL RDS(on) xQg TRADE-OFF @ 4.5V
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size
™” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND
OPTIMISED FOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS
®
INTERNAL SCHEMATIC DIAGRAM
May 2000
1
3
D
2PAK
TO-263
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
VDS
Drain-source Voltage (VGS =0)
30
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)30
V
VGS
G ate-source Volt age
± 15
V
ID
Drain Current (continuous) at Tc =25
oC70
A
ID
Drain Current (continuous) at Tc =100
oC50
A
IDM (
•)
Drain Current (pulsed)
280
A
Ptot
T otal Dissipat ion at Tc =25
oC
100
W
Derating Factor
0.67
W /
o C
Tstg
Storage Temperature
-65 to 175
o C
Tj
Max. Operating Junction Temperature
175
o C
(
•) Pulse width limited by safe operating area
T YPE
VDSS
RDS(on)
ID
STB70NF3LL
30 V
< 0. 01
70 A
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
1/6


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