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Model A100N50X4

Features:

• RoHS Compliant

• 100 Watts

• DC - 2.7 GHz

• AlN Ceramic

• Non-Nichrome Resistive

Element

• Low VSWR

Chip Termination

Ω

Ω

Ω

Description

The A100N50X4 is high performance Aluminum Nitride (AlN) chip

termination intended as an alternative to Beryllium Oxide (BeO). The

termination is well suited to all cellular frequency bands such as; AMPS,

GSM, DCS, PCS, PHS and UMTS. The high power handling makes the

part ideal for terminating circulators and for use in power combiners. The

termination is also RoHS compliant!

General Specifications

Resistive Element

Thick film

Substrate

AlN Ceramic

Terminal Finish

Matte Tin over Nickel Barrier

Operating Temperature

-55 to +150°C (See de rating chart)

Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed

applicable portions of MIL-E-5400. All dimensions in inches.

Electrical Specifications

Resistance Value:

50 Ohms, ± 2%

Power:

100 Watts

Frequency Range:

DC – 2.7 GHz

V.S.W.R.

1.1:1 to 2.7 GHz

Specification based on unit properly installed using suggested mounting instructions

and a 50 ohm nominal impedance. Specifications subject to change.

Outline Drawing

.225

.250

.130

.040

.045

.058

SIDE VIEW

TOP VIEW

ALL DIMENSIONS IN INCHES

A100N50X4 (097) Rev B