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STB60NF03L Datasheet(PDF) 1 Page - STMicroelectronics

Part No. STB60NF03L
Description  N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB60NF03L Datasheet(HTML) 1 Page - STMicroelectronics

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STB60NF03L
N-CHANNEL 30V - 0.008
Ω - 60A D2PAK
STripFET
™ POWER MOSFET
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.008
s
OPTIMIMIZED FOR HIGH SWITCHING
OPERATIONS
s
LOW THRESHOLD DRIVE
s
LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
”Single
Feature
Size
™” strip-based process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
rugged
avalance
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
LOW VOLTAGE DC-DC CONVERTERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
HIGH EFFICIENCY SWITCHING CIRCUITS
®
INTERNAL SCHEMATIC DIAGRAM
September 1999
1
3
D
2PAK
TO-263
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
VDS
Drain-source Voltage (VGS =0)
30
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)30
V
VGS
G ate-source Volt age
± 20
V
ID
Drain Current (continuous) at Tc =25
oC60
A
ID
Drain Current (continuous) at Tc =100
oC42
A
IDM (
•)
Drain Current (pulsed)
240
A
Ptot
T otal Dissipat ion at Tc =25
oC
100
W
Derating Factor
0.67
W /
o C
EAS(1
)
Single Pulse Avalanche Energy
650
mJ
Tstg
Storage Temperature
-65 to 175
o C
Tj
Max. Operating Junction Temperature
175
o C
(
•) Pulse width limited by safe operating area
( 1
) starting Tj =25 oC, ID =30A , VDD = 20V
T YPE
VDSS
RDS(on)
ID
STB60NF03L
30 V
< 0. 01
60 A
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
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