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STP5NK50ZFP Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STP5NK50ZFP
Description  N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP5NK50ZFP Datasheet(HTML) 3 Page - STMicroelectronics

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STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =1 mA, VGS = 0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 50µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID = 2.2 A
1.22
1.5
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =15 V, ID = 2.2 A
3.1
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
535
75
17
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 400V
45
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD =250 V, ID = 2.2 A
RG = 4.7Ω VGS =10 V
(Resistive Load see, Figure 3)
15
10
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =400V, ID = 4.4 A,
VGS =10V
20
4
10
28
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 250 V, ID = 2.2A
RG =4.7Ω VGS =10 V
(Resistive Load see, Figure 3)
32
15
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 400V, ID = 4.4A,
RG =4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
12
12
20
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
4.4
17.6
A
A
VSD (1)
Forward On Voltage
ISD = 4.4 A, VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =4.4 A, di/dt = 100A/µs
VDD =30V, Tj = 150°C
(see test circuit, Figure 5)
310
1425
9.2
ns
nC
A


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