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STP5NK50ZFP Datasheet(PDF) 2 Page - STMicroelectronics

Part No. STP5NK50ZFP
Description  N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP5NK50ZFP Datasheet(HTML) 2 Page - STMicroelectronics

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STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1
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ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) ISD ≤4.4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Symbol
Parameter
Value
Unit
STP5NK50Z
STB5NK50Z-1
STP5NK50ZFP
STD5NK50Z
STD5NK50Z-1
VDS
Drain-source Voltage (VGS =0)
500
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
500
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
4.4
4.4 (*)
4.4
A
ID
Drain Current (continuous) at TC = 100°C
2.7
2.7 (*)
2.7
A
IDM ( )
Drain Current (pulsed)
17.6
17.6 (*)
17.6
A
PTOT
Total Dissipation at TC = 25°C
70
25
70
W
Derating Factor
0.56
0.2
0.56
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
3000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
-
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55to150
-55to150
°C
°C
TO-220
I2PAK
TO-220FP
DPAK
Rthj-case
Thermal Resistance Junction-case Max
1.78
5
1.78
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
4.4
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =50 V)
130
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V


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