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EMC326SP16AK-70L Datasheet(PDF) 8 Page - Emerging Memory & Logic Solutions Inc

Part # EMC326SP16AK-70L
Description  2Mx16 bit CellularRAM AD-MUX
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMC326SP16AK-70L Datasheet(HTML) 8 Page - Emerging Memory & Logic Solutions Inc

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EMC326SP16AK
2Mx16 CellularRAM AD-MUX
8
Preliminary
Table 2: BUS OPERATIONS
Note:
1. With burst mode enabled, CLK must be static(HIGH or LOW) during asynchronous READs and asynchronous WRITEs and to achieve standby power
during standby mode.
2. The WAIT polarity is configured through the bus configuration register (BCR[10]).
3. When LB# and UB# are in select mode (LOW), DQ[15:0] are enabled. When only LB# is in select mode, DQ[7:0] are enabled. When only UB# is
in the select mode, DQ[15:8] are enabled.
4. The device will consume active power in this mode whenever addresses are changed.
5. When the device is in standby mode, address inputs and data inputs/outputs are internally isolated from any external influence.
6. VIN = VCCQ or 0V; all device pins must be static (unswitched) in order to achieve standby current.
7. When the BCR is configured for sync mode, sync READ and WRITE, and async WRITE are supported by EMLSI
8. Burst mode operation is initialized through the bus configuration register (BCR[15]).
9. Initial cycle. Following cycles are the same as BURST CONTINUE. CE# must stay LOW for the equivalent of a single-word burst (as indicated
by WAIT).
Asynchfonous Mode
BCR[15]=1
Power
CLK ADV#
CE#
OE#
WE#
CRE
UB#/
LB#
WAIT2
DQ[15:0]
Notes
Read
Active
X
L
L
H
L
L
Low-z
Data out
4
Write
Active
X
L
X
L
L
L
High-z
Data in
4
Standby
Standby
H or L
X
H
X
X
L
X
High-z
High-z
5, 6
No operation
Idle
X
X
L
X
X
L
X
Low-z
X
4, 6
Configuration register
write
Active
X
L
H
L
H
X
Low-z
High-z
Configuration register
read
Active
X
L
L
H
H
L
Low-z
Config.
Reg.out
Burst Mode
BCR[15]=0
Power
CLK ADV#
CE#
OE#
WE#
CRE
UB#/
LB#
WAIT
DQ[15:0]
Notes
Async read
Active
H or L
L
L
H
L
L
Low-z
Data out
4, 7
Async write
Active
H or L
L
X
L
L
L
Low-z
Data in
4
Standby
Standby
H or L
X
H
X
X
L
X
High-z
High-z
5, 6
No operation
Idle
H or L
X
L
X
X
L
X
Low-z
X
4, 6
Initial burst read
Active
L
L
X
H
L
L
Low-z
Address
4, 8
Initial burst write
Active
L
L
H
L
L
X
Low-z
Address
4, 8
Burst continue
Active
H
L
X
X
X
L
Low-z
Data out
or
Data in
4, 8
Configuration register
write
Active
L
L
H
L
H
X
Low-z
High-z
8, 9
Configuration register
read
Active
L
L
L
H
H
L
Low-z
Config.
Reg.out
8, 9


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