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RT3XBBM Datasheet(PDF) 2 Page - Isahaya Electronics Corporation |
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RT3XBBM Datasheet(HTML) 2 Page - Isahaya Electronics Corporation |
2 / 4 page RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type TYPICAL CHARACTERISTICS (Tr1、Tr2) Electrical characteristics(Ta=25℃) Limits Symbol Parameter Test conditions Min Typ Max Unit V CBO Collector-base breakdown voltage IC=50μA , IE=0mA 40 V VEBO Emitter-base breakdown voltage IE=50μA , C=0mA 40 V VCEO Collector-emitter breakdown voltage IC=1mA , RBE=∞ 20 V ICBO Collector cutoff current VCB=40V , IE=0mA 0.5 μA IEBO Emitter cutoff current V EB=40V , IC=0mA 0.5 μA hFE DC current transfer ratio VCE=5V , IC=-10mA 820 2500 - VCE(sat) Collector-emitter saturation voltage IC=10mA , IB=0.5mA 10 mV R1 Input resistance - 7 10 13 KΩ fT Transition frequency V CE=10V, I E=-10mA, f=100MHz 35 MHz Ron Output On-resistance V I=7V, f=1MHz 0.94 Ω ISAHAYA ELECTRONICS CORPORATION INPUT ON VOLTAGE VS. COLLECTOR CURRENT 0.1 1 10 100 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA) VCE=0.2V Ta=-40℃ 25℃ 75℃ COLLECTOR CURRENT VS. INPUT OFF VOLTAGE 10 100 1000 0 0.2 0.4 0.6 0.8 1 INPUT OFF VOLTAGE VI(OFF) (V) VCE=5V Ta=-40℃ 25℃ 75℃ |
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