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RT3TSSM Datasheet(PDF) 1 Page - Isahaya Electronics Corporation |
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RT3TSSM Datasheet(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 4 page  DESCRIPTION RT3TSSM is a composite transistor built with RT1N150 chip and RT1P150 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit ※ PNP built in transistor of ”－”sign is abbreviation. PRELIMINARY RT3TSSM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit：mm MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER RATING UNIT VCBO Collector to Base voltage 50 V VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 50 V IC Collector current 100 mA ICM Peak Collector current 200 mA PC Collector dissipation（Total, Ta=25℃） 150 mW Tj Junction temperature ＋ 150 ℃ Tstg Storage temperature -55～＋150 ℃ MARKING S TS １ 2 3 6 5 4 . ISAHAYA ELECTRONICS CORPORATION TERMINAL CONNECTOR ①： EMITTER1 ②： BASE1 ③： COLLECTOR2 ④： EMITTER2 ⑤： BASE2 ⑥ :COLLECTOR1 JEITA：SC-88 1.25 2.1 ① ② ③ ⑤ ④ ⑥ R1 RTr1 ① ② ④ ⑤ RTr2 ③ R1 ⑥ |
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