RT3NFFM datasheet(2/3 Pages) ISAHAYA

Part #	RT3NFFM

Description	Composite Transistor With Resistor

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Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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2 / 3 page

PRELIMINARY

RT3NFFM

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

INPUT ON VOLTAGE

VS.COLLECTOR CURRENT

1

10

100

110

100

COLLECTOR CURRENT I C(mA)

VCE=0.2V

COLLECTOR CURRENT

VS.INPUT OFF VOLTAGE

10

100

1000

0.00.4

0.81.2

1.62.0

INPUTOFF VOLTAGE VI(OFF)(V)

VCE=5V

DC FORWARD CURRENT GAIN

VS.COLLECTOR CURRENT

10

100

1000

110

100

COLLECTOR CURRENT I C(mA)

VCE=5V

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Limits

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

V(BR)CEO

Collector to Emitter break down voltage

IC=100μA,RBE=∞

50

-

V

ICBO

Collector cut off current

VCB =50V,IE=0

-

0.1

μ

A

hFE

DC forward current gain

VCE=5V,IC=10mA

20

-

VCE(sat)

Collector to Emitter saturation voltage

IC=10mA,IB=0.5mA

-

0.1

0.3

V

VI(ON)

Input on voltage

VCE=0.2V,IC=5mA

-

1.4

2.3

V

VI(OFF)

Input off voltage

VCE=5V,IC=100μA

0.8

1.1

-

V

R1

Input resistor

-

3.3

4.7

6.1

kΩ

R2/R1

Resistor ratio

-

0.8

1.0

1.2

-

fT

Gain band width product

VCE=6V,IE=-10mA

-

200

-

MHZ

TYPICAL CHARACTERISTICS

ISAHAYA ELECTRONICS CORPORATION

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RT3NFFM Datasheet(PDF) 2 Page - Isahaya Electronics Corporation

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