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RT2N23M Datasheet(PDF) 2 Page - Isahaya Electronics Corporation |
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RT2N23M Datasheet(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 3 page  RT2N23M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE ELECTRICAL CHARACTERISTICS （Ta=25℃） （RTr1、RTr2） Limits Symbol Parameter Test conditions Min Typ Max Unit V(BR)CBO C to E break down voltage I C=100μA，RBE=∞ 50 - - V ICBO Collector cut off current VCB=50V，I E =0 - - 0.1 μA hFE DC forward current gain VCE=5V，I C=5mA 100 - - - VCE(sat) C to E saturation voltage I C=10mA，I B=0.5mA - 0.1 0.3 V R1 Input resistor 33 47 61 KΩ fT Gain band width product VCE=6V，I E=-10mA 200 MHz TYPICAL CHARACTERISTICS (Tr1、Tr2) ISAHAYA ELECTRONICS CORPORATION COLLECTOR CURRENT VS.INPUT OFF VOLTAGE 10 100 1000 0 0.4 0.8 1.2 1.6 2 INPUT OFF VOLTAGE ＶＩ（ＯＦＦ）（Ｖ） VCE=5V INPUT ON VOLTAGE VS.COLLECTOR CURRENT 0.1 1 10 1 10 100 COLLECTOR CURRENT ＩＣ（ｍＡ） VCE=0.2V DC FORWARD CURRENT GAIN VS.COLLECTOR CURRENT 10 100 1000 1 10 100 COLLECTOR CURRENT Ｉ Ｃ（ ｍＡ） VCE=5V |
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