RTAN430C datasheet(2/4 Pages) ISAHAYA

Part #	RTAN430C

Description	TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION RTAN430X SERIES SILICON NPN EPITAXIAL TYPE

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Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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2 / 4 page

TRANSISTOR WITH RESISTOR

FOR MUTING APPLICATION

ＲＴＡＮ４３０Ｘ SERIES

SILICON NPN EPITAXIAL TYPE

MAXIMUM RATING（Ｔａ＝２５℃）

RATING

SYMBOL

PARAMETER

RTAN430T2

RTAN430U

RTAN430M

RTAN430C

UNIT

Ｖ

ＣＢＯ

Collector to Base voltage

40

V

Ｖ

ＥＢＯ

Emitter to Base voltage

40

V

Ｖ

ＣＥＯ

Collector to Emitter voltage

20

V

Ｉ

Ｃ

Collector current

400

mA

Ｐ

Ｃ

Collector

dissipation(Ta=25℃)

125（※）

150

200

mW

Ｔｊ

Junction temperature

+125

+150

℃

Ｔｓｔｇ

Storage temperature

-55～+125

-55～+150

℃

ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃）

※package mounted on 9mm×19mm×1mm glass-epoxy substrate.

LIMIT

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

Ｖ

（ＢＲ）ＣBＯ

C to B break down voltage

I

C=50μA，IE=0mA

40

V

Ｖ

（ＢＲ）EBＯ

E to B break down voltage

I

E=50μA，IC=0mA

40

V

Ｖ

（ＢＲ）CEＯ

C to E break down voltage

I

C=1mA，RBE=∞

20

V

Ｉ

ＣＢＯ

Collector cut off current

V

CB=40V，I E =0mA

0.5

μA

Ｉ

EＢＯ

Emitter cut off current

V

EB=40V，I C =0mA

0.5

μA

ｈ

ＦＥ

DC forward current gain

V

CE=5V，I C =10mA

820

2500

－

Ｖ

ＣＥ（ｓａｔ）

C to E saturation voltage

I

C =10mA，I B =0.5mA

10

mV

Ｒ

１

Input resistance

3.29

4.7

6.11

kΩ

ｆ

Ｔ

Gain band width product

V

CE=10V，I E =-10mA，f=100MHz

38

MHz

R

ON

Output “ON” resistance

V

I=5V，RL=1kΩ

0.80

Ω

TYPICAL CHARACTERISTICS

ISAHAYA ELECTRONICS CORPORATION

Input on voltage - collector current

0.1

1

10

100

0.1

1

10

100

1000

collector current IC (mA)

Ta=25℃

VCE=0.2V

collector current - Input on voltage

10

100

1000

0

0.2

0.4

0.6

0.8

1

Input off voltage VI(OFF) (V)

Ta=25℃

VCE=5V

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