RT1P436U datasheet(2/3 Pages) ISAHAYA

Part #	RT1P436U

Description	Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type

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Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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〈Transistor〉

ＲＴ１Ｐ４３６Ｘ SERIES

Transistor With Resistor

For Switching Application

Silicon PNP Epitaxial Type

MAXIMUM RATING (Ta=25 ℃)

RATING

SYMBOL

PARAMETER

RT1P436U

RT1P436M

RT1P436C

RT1P436S

UNIT

Ｖ

ＣＢＯ

Collector to Base voltage

-50

V

Ｖ

ＥＢＯ

Emitter to Base voltage

-6

V

Ｖ

ＣＥＯ

Collector to Emitter voltage

-50

V

Ｉ

Ｃ

Collector current

-100

mA

Ｉ

ＣＭ

Peak Collector current

-200

mA

Ｐ

Ｃ

Collector dissipation(Ta=25℃)

150

200

450

mW

Ｔｊ

Junction temperature

+150

℃

Ｔｓｔｇ

Storage temperature

-55∼+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25 ℃)

LIMIT

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

Ｖ

（ＢＲ）ＣＥＯ

C to E break down voltage

I

C=-100μA，RBE=∞

-50

V

Ｉ

ＣＢＯ

Collector cut off current

V

CB=-50V，I E =0

-0.1

μA

ｈ

ＦＥ

DC forward current gain

V

CE=-5V，I C =-10mA

80

−

Ｖ

ＣＥ（ｓａｔ）

C to E saturation voltage

I

C =-10mA，I B =-0.5mA

-0.1

-0.3

V

Ｖ

Ｉ

（ＯＮ）

Input on voltage

V

CE=-0.2V，I C =-5mA

-0.8

-1.4

V

Ｖ

Ｉ

（ＯＦＦ）

Input off voltage

V

CE=-5V，I C =-100μA

-0.4

-0.6

V

Ｒ

１

Input resistance

3.3

4.7

6.1

kΩ

Ｒ

２／Ｒ１

Resistance ratio

8

10

12

ｆ

Ｔ

Gain band width product

V

CE=-6V，I E =10mA

150

MHz

TYPICAL CHARACTERISTICS

COLLECTOR CURRENT

VS.INPUT OFF VOLTAGE

-10

-100

-1000

-2

-1.6

-1.2

-0.8

-0.4

0

INPUT OFF VOLTAGE ＶＩ（ＯＦＦ）（Ｖ）

VCE=-5V

INPUT ON VOLTAGE

VS.COLLECTOR CURRENT

-0.1

-1

-10

-1

-10

-100

COLLECTOR CURRENT ＩＣ（ｍＡ）

VCE=-0.2V

DC FORWARD CURRENT GAIN

VS.COLLECTOR CURRENT

10

100

1000

-1

-10

-100

COLLECTOR CURRENT Ｉ

Ｃ（

ｍＡ）

VCE=-5V

ISAHAYA ELECTRONICS CORPORATION

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