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STB30NS15 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STB30NS15
Description  N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET??POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB30NS15 Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
ON (*)
DYNAMIC
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.36
62.5
300
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
150
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
23
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 15 A
0.075
0.1
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (*)
Forward Transconductance
VDS = 20 V
ID = 15 A
8S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V f = 1 MHz VGS = 0
990
175
110
pF
pF
pF


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