STB24NF10 datasheet(1/6 Pages) STMICROELECTRONICS

Part #	STB24NF10

Description	N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET

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STB24NF10

N - CHANNEL 100V - 0.07

Ω - 24A TO-263

LOW GATE CHARGE STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.07

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

SURFACE-MOUNTING D

2PAK (TO-263)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

DESCRIPTION

This

MOSFET

series

realized

with

STMicroelectronics unique STripFET process has

specifically been designed to minimize input

capacitance and gate charge. It is therefore

suitable

as

primary

switch

in

advanced

high-efficiency, high-frequency isolated DC-DC

converters

for

Telecom

and

Computer

applications.

It

is

also

intended

for

any

applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

®

INTERNAL SCHEMATIC DIAGRAM

April 2000

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

100

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC24

A

ID

Drain Current (continuous) at Tc = 100

oC15

A

IDM(

•)

Drain Current (pulsed)

96

A

Ptot

T otal Dissipation at Tc =25

oC80

W

Derating Factor

0.53

W /

oC

dv/ dt(1 )

Peak Diode Recovery voltage slope

9

V/ns

EAS (2)

Single Pulse Avalanche Energy

75

mJ

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

( 2) starting Tj =25

oC, I

D =24A , VDD = 50V

(1) ISD

≤ 24 A, di/dt ≤ 300A/µs, V

DD

≤ V

(BR)DSS,Tj

≤ T

JMA

TYPE

VDSS

RDS(on )

ID

STB24NF10

100 V

< 0.077

Ω

24 A

1

3

D

2PAK

TO-263

(Suffix ”T4”)

1/6

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