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RT1P231U Datasheet(PDF) 2 Page - Isahaya Electronics Corporation

Part # RT1P231U
Description  Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
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Manufacturer  ISAHAYA [Isahaya Electronics Corporation]
Direct Link  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

RT1P231U Datasheet(HTML) 2 Page - Isahaya Electronics Corporation

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〈Transistor〉
RT1P231X SERIES
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL
PARAMETER
RT1P231U
RT1P231M
RT1P231C
RT1P231S
UNIT
CBO
Collector to Base voltage
-50
V
EBO
Emitter to Base voltage
-10
V
CEO
Collector to Emitter voltage
-50
V
 C
Collector current
-100
mA
 CM
Peak Collector current
-200
mA
Collector dissipation(Ta=25℃)
150
200
450
mW
Tj
Junction temperature
+150
+150
Tstg
Storage temperature
-55∼+150
-55∼+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
(BR)CEO
C to E break down voltage
I
 C=-100μA,RBE=∞
-50
V
 CBO
Collector cut off current
V
CB=-50V,I E =0
-0.1
μA
FE
DC forward current gain
V
CE=-5V,I C =-20mA
20
CE(sat)
C to E saturation voltage
I
 C =-10mA,I B =-0.5mA
-0.3
V
(ON)
Input on voltage
V
CE=-0.2V,I C =-5mA
-1.3
-2.2
V
(OFF)
Input off voltage
V
CE=-5V,I C =-100μA
-0.7
-1.1
V
Input resistance
1.5
2.2
2.9
/R
Resistance ratio
0.8
1.0
1.2
Gain band width product
V
CE=-6V,I E =10mA
150
MHz
TYPICAL CHARACTERISTICS
COLLECTOR CURRENT
VS.INPUT OFF VOLTAGE
-10
-100
-1000
-2
-1.6
-1.2
-0.8
-0.4
0
INPUT OFF VOLTAGE VI(OFF)(V)
VCE=-5V
INPUT ON VOLTAGE
VS.COLLECTOR CURRENT
-0.1
-1
-10
-1
-10
-100
COLLECTOR CURRENT I(mA)
VCE=-0.2V
DC FORWARD CURRENT GA IN
VS.COLLECTOR CURRENT
10
100
1000
-1
-10
-100
COLLECTOR CURRENT I
mA)
VCE=-5V
ISAHAYA ELECTRONICS CORPORATION


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