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CR05AS Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. CR05AS
Description  LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CR05AS Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
1.5
1.0
0.5
0
0.8
0
0.2
0.4
0.6 0.7
0.1
0.3
0.5
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
θ = 30° 60° 120°
90° 180°
270°
DC
1.5
1.0
0.5
0
0.8
0
0.2
0.4
0.6 0.7
0.1
0.3
0.5
θ = 30° 60° 120°
90°
180°
θ θ
360°
RESISTIVE LOADS
160
120
60
40
20
140
100
80
0
160
–40
0
40
80
120 140
–20
20
60
100
RGK = 1k
TYPICAL EXAMPLE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
160
120
60
40
20
140
100
80
0
0.8
0
0.2
0.4
0.6
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
θ = 30°
60°
120°
90°
180°
160
120
60
40
20
140
100
80
0
0.8
0
0.2
0.4
0.6
θ θ
360°
RESISTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
θ = 30°
60°
120°
90°
180°
160
120
60
40
20
140
100
80
0
0.8
0
0.2
0.4
0.6
θ = 30°
120°
180°
DC
270°
60°
90°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
ALUMINUM BOARD
WITH SOLDERING
25 25 ± t0.7
NATURAL
CONVECTION


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