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RT1N237C Datasheet(PDF) 2 Page - Isahaya Electronics Corporation |
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RT1N237C Datasheet(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 3 page  〈Transistor〉 ＲＴ１Ｎ２３７Ｘ SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type MAXIMUM RATING (Ta=25℃) RATING SYMBOL PARAMETER RT1N237T RT1N237U RT1N237M RT1N237C RT1N237S UNI T Ｖ ＣＢＯ Collector to Base voltage 50 V Ｖ ＥＢＯ Emitter to Base voltage 6 V Ｖ ＣＥＯ Collector to Emitter voltage 50 V Ｉ Ｃ Collector current 100 mA Ｉ ＣＭ Peak Collector current 200 mA Ｐ Ｃ Collector dissipation(Ta=25℃) 125 （※ ） 150 200 450 mW Ｔｊ Junction temperature +125 +150 ℃ Ｔｓｔｇ Storage temperature -55～+125 -55～+150 ℃ （※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate. ELECTRICAL CHARACTERISTICS (Ta=25℃) LIMIT SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT Ｖ （ＢＲ）ＣＥＯ C to E break down voltage I C=100μA，RBE=∞ 50 V Ｉ ＣＢＯ Collector cut off current V CB=50V，I E =0 0.1 μA ｈ ＦＥ DC forward current gain V CE=5V，I C =10mA 80 － Ｖ ＣＥ（ｓａｔ） C to E saturation voltage I C =10mA，I B =0.5mA 0.3 V Ｖ Ｉ（ＯＮ） Input on voltage V CE=0.2V，I C =5mA 0.7 1.1 V Ｖ Ｉ（ＯＦＦ） Input off voltage V CE=5V，I C =100μA 0.5 0.6 V Ｒ １ Input resistance 1.5 2.2 2.9 kΩ Ｒ ２／Ｒ１ Resistance ratio 22 ｆ Ｔ Gain band width product V CE=6V，I E =-10mA 200 MHz TYPICAL CHARACTERISTICS COL L ECTOR C U R R EN T VS. INP UT OF F V OL TA GE 10 100 1000 0 0.4 0.8 1.2 1.6 2 INPUT OFF VOLTAGE ＶＩ（ＯＦＦ）（Ｖ） VCE=5V IN P U T ON V OL TA GE V S.C OLLEC TOR C U R R ENT 0.1 1 10 1 10 100 COLLECTOR CURRENT Ｉ Ｃ（ｍＡ） VCE=0.2V D C F OR W A R D C UR R EN T G AIN V S.C OLLEC TOR C U R R ENT 10 100 1000 1 10 100 COLLECTOR CURRENT ＩＣ（ｍＡ） VCE=5V ISAHAYA ELECTRONICS CORPORATION |
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