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STB100NH02L Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STB100NH02L
Description  N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB100NH02L Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB100NH02L
4/13
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 25mA, VGS =0
24
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 20V
VDS = 20V, TC = 125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
1
1.8
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A
VGS = 5V, ID = 15A
0.0052
0.007
0.006
0.011
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
VDS = 10V , ID =30A
40
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 15V, f = 1MHz,
VGS = 0
2850
800
120
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 10V, ID = 30A
RG =4.7Ω VGS = 10V
(see Figure 13)
13
75
50
18
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 10V, ID = 30A,
VGS = 10V, RG =4.7Ω
(see Figure 14)
47.5
10
7
64
nC
nC
nC
RG
Gate input resistance
f=1 MHz gate DC
Bias=0
test signal level =20 mV
open drain
1


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