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ST93C06M3013TR Datasheet(PDF) 1 Page - STMicroelectronics |
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ST93C06M3013TR Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 15 page ST93C06 ST93C06C 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN June 1997 1/15 This is information on a product still in production bu t not recommended for new de signs. AI00816B D VCC ST93C06 ST93C06C VSS C Q S ORG Figure 1. Logic Diagram 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE 5V ±10% SUPPLY VOLTAGE SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PERFORMANCES for ”C” VERSION ST93C06 and ST93C06C are replaced by the M93C06 DESCRIPTION The ST93C06 and ST93C06C are 256 bit Electri- cally Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. In the text the two products are referred to as ST93C06. The memory is divided into either 32 x 8 bit bytes or 16 x 16 bit words. The organization may be selected by a signal applied on the ORG input. The memory is accessed through a serial input (D) and by a set of instructions which includes Read a byte/word, Write a byte/word, Erase a byte/word, Erase All and Write All. ARead instruction loads the address of the first byte/word to be read into an internal address pointer. S Chip Select Input D Serial Data Input Q Serial Data Output C Serial Clock ORG Organisation Select VCC Supply Voltage VSS Ground Table 1. Signal Names 8 1 SO8 (M) 150mil Width 8 1 PSDIP8 (B) 0.4mm Frame |
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