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INJ0003AM1 Datasheet(PDF) 2 Page - Isahaya Electronics Corporation |
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INJ0003AM1 Datasheet(HTML) 2 Page - Isahaya Electronics Corporation |
2 / 4 page INJ0003AX SERIES High speed switching ・PRELIMINARY Notice: This is not a final specification Some parametric are subject to change. Silicon P-channel MOSFET MAXIMUM RATING(Ta=25℃) RATING SYMBOL PARAMETER INJ0003AT2 INJ0003AU1 INJ0003AM1 INJ0003AC1 UNIT V DSS Drain-source voltage -20 V V GSS Gate-source voltage ±8 V I D Drain current -200 mA P D Total power dissipation (Ta=25℃) 125(※) 150 200 mW Tch Channel temperature +125 +150 ℃ Tstg Range of Storage temperature -55~+125 -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃) ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. LIMIT SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT V(BR)DSS Drain-source breakdown voltage I D=-100μA, VGS=0V -20 - - V IGSS Gate-source leak current V GS=±5V, VDS=0V - - ±0.5 μA IDSS Zero gate voltage drain current V DS=-20V ,VGS=0V - - -50 μA Vth Gate threshold voltage I D=-250μA, V DS= V GS -0.6 - -1.2 V | Yfs | Forward transfer admittance V DS=-10V, I D=-0.1A - 280 - mS RDS(ON) Static drain-source on-state resistance I D=-100mA, V GS=-4.0V - 2 - Ω Ciss Input capacitance V DS=-10V, V GS=0V,f=1MHz - 37 - pF Coss Output capacitance V DS=-10V, V GS=0V,f=1MHz - 12 - pF tON - 16 - tOFF Switching time V DD=-5V , I D=-10mA V GS=0~-5V - 110 - ns Switching time test condition VDD=-5V D.U.≦1% Common source Ta=25℃ VDS(ON) -5V 0V 90% 10% VDD 90% 10% ton toff tr tf 0 -5V 10μs IN OUT 50Ω RL VDD test circuit input waveform output waveform VDD=-5V D.U.≦1% Common source Ta=25℃ VDS(ON) -5V 0V 90% 10% VDD 90% 10% ton toff tr tf VDS(ON) -5V 0V 90% 10% VDD 90% 10% ton toff tr tf -5V 0V 90% 10% VDD 90% 10% ton toff tr tf 0 -5V 10μs IN OUT 50Ω RL VDD IN OUT 50Ω RL VDD test circuit input waveform output waveform ISAHAYA ELECTRONICS CORPORATION |
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