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INK0002AM1 Datasheet(PDF) 2 Page - Isahaya Electronics Corporation |
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INK0002AM1 Datasheet(HTML) 2 Page - Isahaya Electronics Corporation |
2 / 4 page INK0002AX SERIES High speed switching Silicon N-channel MOSFET MAXIMUM RATING(Ta=25℃) RATING SYMBOL PARAMETER INK0002AT2 INK0002AU1 INK0002AM1 INK0002AC1 UNIT V DSS Drain-source voltage 30 V V GSS Gate-source voltage ±8 V I D Drain current 200 mA P D Total power dissipation (Ta=25℃) 125(※) 150 200 mW Tch Channel temperature +125 +150 ℃ Tstg Range of Storage temperature -55~+125 -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃) ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. LIMIT SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT V(BR)DSS Drain-source breakdown voltage I D=100μA, V GS=0V 30 - - V IGSS Gate-source leak current V GS=±5V, VDS=0V - - ±0.5 μA IDSS Zero gate voltage drain current V DS=30V ,VGS=0V - - 50 μA Vth Gate threshold voltage I D=250μA, V DS= V GS 0.6 - 1.2 V | Yfs | Forward transfer admittance V DS=10V, I D=0.1A - 300 - mS RDS(ON) Static drain-source on-state resistance I D=100mA, V GS=4.0V - 1.1 - Ω Ciss Input capacitance V DS=10V, V GS=0V,f=1MHz - 33 - pF Coss Output capacitance V DS=10V, V GS=0V,f=1MHz - 6.8 - pF tON - 12 - tOFF Switching time V DD =5V , I D =10mA V GS=0~5V - 80 - ns Switching time test condition VDD=5V D.U.≦1% Common source Ta=25℃ 90% 10% 90% 10% 0V 5V VDD VDS(ON) ton toff tr tf 5V 0 10μs IN OUT 50Ω RL VDD test circuit input waveform output waveform VDD=5V D.U.≦1% Common source Ta=25℃ 90% 10% 90% 10% 0V 5V VDD VDS(ON) ton toff tr tf 90% 10% 90% 10% 0V 5V VDD VDS(ON) ton toff tr tf 5V 0 10μs IN OUT 50Ω RL VDD IN OUT 50Ω RL VDD test circuit input waveform output waveform ISAHAYA ELECTRONICS CORPORATION |
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