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ST93CS66 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. ST93CS66
Description  4K 256 x 16 SERIAL MICROWIRE EEPROM
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST93CS66 Datasheet(HTML) 1 Page - STMicroelectronics

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ST93CS66
ST93CS67
4K (256 x 16) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
June 1997
1/16
This is information on a product still in production bu t not recommended for new de signs.
AI00906B
D
VCC
ST93CS66
ST93CS67
VSS
CQ
PRE
W
S
Figure 1. Logic Diagram
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE
– 3V to 5.5V for the ST93CS66
– 2.5V to 5.5V for the ST93CS67
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS66 and ST93CS67 are replaced by
the M93S66
DESCRIPTION
The ST93CS66 and ST93CS67 are 4K bit Electri-
cally Erasable Programmable Memory (EEPROM)
fabricated with SGS-THOMSON’s High Endurance
Single Polysilicon CMOS technology. The memory
is accessed through a serial input D and output Q.
The 4K bit memory is organized as 256 x 16 bit
words.The memory is accessed by a set of instruc-
tions which include Read, Write, Page Write, Write
All and instructions used to set the memory protec-
tion. A Read instruction loads the address of the
first word to be read into an internal address
pointer.
S
Chip Select Input
D
Serial Data Input
Q
Serial Data Output
C
Serial Clock
PRE
Protect Enable
W
Write Enable
VCC
Supply Voltage
VSS
Ground
Table 1. Signal Names
1
14
SO14 (ML)
150mil Width
8
1
PSDIP8 (B)
0.25mm Frame


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