1 / 1 page
FEATURES
DESCRIPTION
APPLICATIONS
• Red enhanced
• Photocondutctive
• High quantum efficiency
SYMBOL
PARAMETER
MIN
MAX
UNITS
VBR
Reverse Voltage
75
V
TSTG
Storage Temperature
-40
+125
°C
TO
Operating Temperature
-40
+100
°C
TS
Soldering Temperature*
+224
°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISC
Short Circuit Current
H = 100 fc, 2850 K
15
17
μA
ID
Dark Current
VR = 5 V
0.5
2
nA
RSH
Shunt Resistance
VR = 10 mV
60
150
MW
CJ
Junction Capacitance
VR = 5 V, f = 1 MHz
10
pF
lrange
Spectral Application Range
Spot Scan
350
1100
nm
VBR
Breakdown Voltage
I = 10 μA
25
50
V
NEP
Noise Equivalent Power
VR = 0V @ l=Peak
1x10
-14
W/ √ Hz
tr
Response Time
RL = 1KΩ,VR = 5V
10
nS
SPECTRAL RESPONSE
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
Wavelength (nm)
Solderable Silicon Photodiodes
PDB-C601-1
PACKAGE DIMENSIONS INCH [mm]
BARE SHIP PACKAGE
The PDB-C601-1 is a silicon red enhanced
solderable photodiode designed for low capacitance
and high speed for photoconductive applications.
• Optical encoder
• Position sensor
• Industrial controls
• Instrumentation
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
CHIP DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
SOLDERABLE PHOTODIODE
.014 [0.36]
.021 [0.53]
.030 [0.76]
.125 [3.18]
.074 [1.88]
.022 [0.56]
ACTIVE AREA
ACTIVE AREA
.040 [1.02]
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
