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ST52T400 Datasheet(PDF) 36 Page - STMicroelectronics |
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ST52T400 Datasheet(HTML) 36 Page - STMicroelectronics |
36 / 94 page ST52T400/T440/E440/T441 36/94 3.1.5 Stand by Mode. EPROM has a standby mode which reduces the active current from 10mA (Programming mode) to less than 100 µA. Mem- ory is placed in standby mode by setting PHASE signal at high level or when the EPROM Control Register value is 0 and PHASE signal is low. 3.1.6 ID code. A software identification code, called ID code may be written to distinguish which software version is stored in the memory. 64 Bytes are dedicated to store this code by using the address values from 0 to 63. The ID Code may be read or verified even if the Memory Lock Status is “0". The signals timing is the same as that of a normal operation. 3.2 Eprom Erasure Thanks to the transparent window available in the CDIP28W package, its memory contents may be erased by exposure to UV light. Erasure begins when the device is exposed to light with a wavelength shorter than 4000Å. It should be noted that sunlight, as well as some types of artificial light, includes wavelengths in the 3000-4000Å range which, on prolonged exposure, can cause erasure of memory contents. It is thus recommended that EPROM devices be fitted with an opaque label over the window area in order to prevent unintentional erasure. The recommended erasure procedure for EPROM devices consists of exposure to short wave UV light having a wavelength of 2537Å. The minimum recommended integrated dose (intensity x expo- sure time) for complete erasure is 15Wsec/cm2. This is equivalent to an erasure time of 5-10 min- utes using a UV source having an intensity of 12mW/cm2 at a distance of 25mm (1 inch) from the device window. |
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