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EDS1216AGTA Datasheet(PDF) 4 Page - Elpida Memory

Part # EDS1216AGTA
Description  128M bits SDRAM (8M words 횞 16 bits)
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDS1216AGTA Datasheet(HTML) 4 Page - Elpida Memory

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EDS1216AGTA
Preliminary Data Sheet E0847E20 (Ver. 2.0)
4
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, execute power up sequence and initialization sequence before proper device operation is achieved
(refer to the Power up sequence).
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to VDD + 0.5 (≤ 4.6 (max.))
V
Supply voltage relative to VSS]
VDD
–0.5 to +4.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating ambient temperature
TA
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA = 0 to +70
°C)
Parameter
Symbol
min.
max.
Unit
Notes
Supply voltage
VDD, VDDQ
3.0
3.6
V
1
VSS, VSSQ
0
0
V
2
Input high voltage
VIH
2.0
VDD + 0.3
V
3
Input low voltage
VIL
–0.3
0.8
V
4
Notes: 1. The supply voltage with all VDD and VDDQ pins must be on the same level.
2. The supply voltage with all VSS and VSSQ pins must be on the same level.
3. VIH (max.) = VDD + 1.5V (pulse width ≤ 5ns).
4. VIL (min.) = VSS – 1.5V (pulse width ≤ 5ns).


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