AO4484

Symbol

Min

Typ

Max

Units

40

V

1

5

±100

nA

1.7

2.2

3

V

120

A

8.2

10

12.5

16

10

12.5

75

S

0.72

1

V

2.5

A

1500

1950

pF

215

pF

135

pF

2

3.5

5

Ω

27.2

37

nC

13.6

18

nC

4.5

nC

6.4

nC

6.4

ns

17.2

ns

29.6

ns

16.8

ns

30

40

ns

19

nC

0

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

On state drain current

Zero Gate Voltage Drain Current

Gate-Body leakage current

Body Diode Reverse Recovery Time

Reverse Transfer Capacitance

Static Drain-Source On-Resistance

Diode Forward Voltage

m

Ω

Gate Threshold Voltage

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

Turn-Off DelayTime

Turn-Off Fall Time

Turn-On DelayTime

Turn-On Rise Time

Gate Source Charge

Gate Drain Charge

µA

Total Gate Charge

Output Capacitance

Forward Transconductance

Gate resistance

SWITCHING PARAMETERS

DYNAMIC PARAMETERS

Maximum Body-Diode Continuous Current

Total Gate Charge

Input Capacitance

value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

curve provides a single pulse rating.

F. The current rating is based on the t ≤ 10s thermal resistance rating.

Rev0 April 2008

Alpha Omega Semiconductor, Ltd.

www.aosmd.com