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STP5NK52ZD Datasheet(PDF) 5 Page - STMicroelectronics

Part # STP5NK52ZD
Description  N-channel 520V - 1.22廓 - 4.4A - TO-220 - DPAK - I2PAK - IPAK Zener-protected SuperMESH??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP5NK52ZD Datasheet(HTML) 5 Page - STMicroelectronics

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STB5NK52ZD-1 - STD5NK52ZD-1 - STD5NK52ZD - STP5NK52ZD
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test Conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 260V, ID = 2.2A,
RG = 4.7Ω, VGS = 10V
(see Figure 15)
11.4
13.6
23.1
15
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
4.4
17.6
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward On Voltage
ISD = 4.4A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4.4A, di/dt = 100A/µs
VDD = 60V, Tj = 25°C
(see Figure 20)
97.7
300
5.9
ns
nC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4.4A, di/dt = 100A/µs
VDD = 60V, Tj = 150°C
(see Figure 20)
139
500
7.2
ns
nC
A
Table 8.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
Gate-source breakdown
voltage
Igs=± 1mA (Open Drain)
30
V


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