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NTE2646 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE2646 Datasheet(HTML) 1 Page - NTE Electronics |
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1 / 2 page  NTE2646 Silicon NPN Transistor General Purpose Amplifier, Switch Surface Mount Features: D Low Current D Low Voltage Applications: D General Purpose Switching and Amplification Absolute Maximum Ratings: Collector−Base Voltage (Open Emitter), VCBO 80V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector−Emitter Voltage (Open Base), VCEO 65V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter−Base Voltage (Open Collector), VEBO 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Collector Current, IC Continuous 100mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak 200mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Base Current, IBM 200mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation (TA = +25°C, Note 1), Ptot 200mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction Temperature, TJ +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Ambient Temperature Range, TA −65° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg −65° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction−to−Ambient (In free air, Note 1), RthJA 625K/W . . . . . . . . . . . . . . . . . Note 1. Transistor mounted on a FR4 printed−circuit board. Electrical Characteristics: (TA = +25 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Base Cut−Off Current ICBO VCB = 30V, IE = 0 − − 15 nA VCB = 30V, IE = 0, TJ = +150°C − − 5 µA Emitter−Base Cut−Off Current IEBO VEB = 5V, IC = 0 − − 100 nA DC Current Gain hFE IC = 10µA, VCE = 5V − 150 − IC = 2mA, VCE = 5V 200 290 450 Collector−Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 0.5mA − 90 250 mV IC = 10mA, IB = 5mA, Note 2 − 200 600 mV Base−Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 0.5mA − 700 − mV IC = 10mA, IB = 5mA, Note 2 − 900 − mV Note 2. Pulse Test: tp ≤ 300µs, δ ≤ 0.02. |
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