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1N4148WS Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. 1N4148WS
Description  Small Signal Diodes
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
1N4148WS / 1N4448WS / 1N914BWS Rev. 1.0
1
March 2008
1N4148WS / 1N4448WS / 1N914BWS
Small Signal Diodes
• General Purpose Diodes
• Fast switching Device( TRR < 4.0 ns )
• Very Small and Thin SMD package
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
* Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics T
a=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRSM
Non-Repetitive Peak Reverse Voltage
100
V
VRRM
Repetitive Peak Reverse Voltage
75
V
I FRM
Repetitive Peak Forward Current
300
mA
IO
Continuous Forward Current
150
mA
TJ
Operating Junction Temperature Range
+150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
Symbol
Parameter
Value
Unit
RθJA
Thermal Resistance, Junction to Ambient
500
°C/W
PD
Power Dissipation(TC=25°C)
200
mW
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVR
Breakdown Voltage
IR = 100 μA
IR = 5 μA
100
75
V
IR
Reverse Current
VR = 20 V
VR = 75 V
25
5
nA
μA
VF
Forward Voltage
1N4448WS/ 914BWS
1N4148WS
1N4448WS/ 914BWS
IF = 5 mA
IF = 10 mA
IF = 100 mA
0.62
0.72
1
1
V
C
O
Diode Capacitance
VR = 0, f = 1 MHz
4
pF
TRR
Reverse Recovery Time
I F = 10 mA, IR = 60mA
I RR = 1 mA, RL = 100 Ω
4
nS
SOD-323F
*Band Denotes Cathode
Device Marking Code
Device Type
Device Marking
1N4148WS
S1
1N4448WS
S2
1N914BWS
S3




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