TMS29LF040, TMS29VF040

524288 BY 8BIT

FLASH MEMORIES

SMJS825D − SEPTEMBER 1995 − REVISED JUNE 1998

5

POST OFFICE BOX 1443

operation

Table 1 summarizes the operation modes.

Table 1. Operation Modes

MODE

FUNCTIONS†

MODE

E

G

W

A0

A1

A6

A9

DQ0 − DQ7

Read

VIL

VIL

VIH

A0

A1

A6

A9

Data out

Output disable

VIL

VIH

VIH

X

X

X

X

Hi-Z

Standby and write inhibit

VIH

X

X

X

X

X

X

Hi-Z

Algorithm-selection mode

VIL

VIL

VIH

VIL

VIL

VIL

VID

Mfr. equivalent code 97h

Algorithm-selection mode

VIL

VIL

VIH

VIH

VIL

VIL

VID

Device equivalent code 94h

Write‡

VIL

VIH

VIL

A0

A1

A6

A9

Data in

Sector-protect§

VIL

VID

VIL

X

X

X

VID

X

Sector-protect verify§

VIL

VIL

VIH

VIL

VIH

VIL

VID

Data out

Sector-unprotect§¶

VID

VID

VIL

X

X

VIH

VID

X

Sector-unprotect verify§

VIL

VIL

VIH

VIL

VIH

VIH

VID

Data out

Erase operations

VIL

VIH

See

Note 1

See

Note 1

See

Note 1

See

Note 1

See

Note 1

See Note 1

† X can be VIL or VIH.

‡ See Table 3 for valid address and data during write (byte program).

§ Operation at VCC = 3.3 V and TA = 25°C.

¶ Address pins A12 and A16 = VIH.

NOTE 1: See Figure 6 through Figure 9.

read mode

To read the output of the TMS29xF040, a low-level logic signal is applied to the E and G pins. When two or more

TMS29xF040 devices are connected in parallel, the output of any one device can be read without interference.

The E pin is power control and is used for device selection. The G pin is output control and is used to gate the

data output onto the bus from the selected device.

standby mode

mode, the outputs are placed in the high-impedance state. Applying a CMOS logic-high level on E reduces the

current to 100

µA maximum.

If the TMS29xF040 is deselected during erasure or programming, the device continues to draw active current

until the operation is complete.

output disable

in the high-impedance state.