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TIM0910-4 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TIM0910-4 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM0910-4 TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 9.5GHz to 10.5GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power at 1dB Gain Compression Point P1dB dBm 35.5 36.5 ⎯ Power Gain at 1dB Gain Compression Point G1dB dB 6.5 7.5 ⎯ Drain Current IDS A ⎯ 1.7 2.2 Power Added Efficiency ηadd VDS= 9V f= 9.5 to 10.5GHz % ⎯ 24 ⎯ Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C ⎯ ⎯ 70 Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Transconductance gm VDS= 3V IDS= 2.0A mS ⎯ 1200 ⎯ Pinch-off Voltage VGSoff VDS = 3V IDS= 60mA V -2.0 -3.5 -5.0 Saturated Drain Current IDSS VDS = 3V VGS= 0V A ⎯ 4.0 ⎯ Gate-Source Breakdown Voltage VGSO IGS= -60 μA V -5 ⎯ ⎯ Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ 2.9 3.5 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Sep. 2006 |
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