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SUD50N04-25P Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUD50N04-25P Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 3 page Vishay Siliconix SPICE Device Model SUU/SUD50N04-25P SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 494 A VGS = 10 V, ID = 15 A 0.018 0.016 Drain-Source On-State Resistance a rDS(on) VGS = 4.5 V, ID = 10 A 0.021 0.020 Ω Forward Voltage a VSD IS = 10 A 0.86 0.87 V Forward Transconductance a gfs VDS =15V, ID = 15 A 31 42 S Dynamic b Input Capacitance Ciss 1376 1195 Output Capacitance Coss 152 150 Reverse Transfer Capacitance Crss VDS = 20 V, VGS = 0 V, f = 1 MHz 68 80 pF VDS = 20 V, VGS = 10 V, ID = 30 A 22 25 Total Gate Charge c Qg 11 11.4 Gate-Source Charge c Qgs 3.2 3.2 Gate-Drain Charge c Qgd VDS = 20 V, VGS = 4.5 V, ID = 30 A 4.2 4.2 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. 2 www.vishay.com Document Number: 74356 S-62520 Rev. A, 18-Dec-06 |
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