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STP15NM60N Datasheet(PDF) 5 Page - STMicroelectronics

Part # STP15NM60N
Description  N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP15NM60N Datasheet(HTML) 5 Page - STMicroelectronics

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STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300V, ID = 7A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
12
14
80
30
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
14
56
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 14A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =14A, di/dt =100A/µs,
VDD = 100V, Tj = 25°C
(see Figure 19)
390
5
25
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100V
di/dt =100A/µs, ISD = 14A
Tj = 150°C (see Figure 19)
500
7
25
ns
µC
A


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