CR02AM-8 datasheet(3/5 Pages) MITSUBISHI

Part #	CR02AM-8

Description	LOW POWER USE GLASS PASSIVATION TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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3 / 5 page

Feb.1999

MITSUBISHI SEMICONDUCTOR

〈THYRISTOR〉

CR02AM-8A

LOW POWER USE

GLASS PASSIVATION TYPE

102

10–2

100

101

7

5

3

2

10–1

7

5

3

2

100

7

5

3

2

7

5

3

2

10–223 5 7

23 5 7

10–1

102

23 5 7

VFGM = 6V

VGT = 0.8V

IGT = 100µA

(Tj = 25°C)

PGM = 0.1W

PG(AV) = 0.01W

VGD = 0.2V

IFGM = 0.1A

MAXIMUM AVERAGE POWER DISSIPATION

(SINGLE-PHASE HALF WAVE)

AVERAGE ON-STATE CURRENT (A)

GATE TRIGGER VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

GATE CURRENT (mA)

1.0

0.8

0.7

0.6

0.3

0.4

0.1

0

160

–40 –20

20

80

140

120

0.2

0.5

0.9

060

40

100

,,,,,,,,,,,

TYPICAL

EXAMPLE

DISTRIBUTION

0.8

0.6

0.3

0.2

0.1

0.7

0.5

0.4

0

0.4

0

0.1

0.2

0.3

θ = 30°

60°

120°

90°

180°

θ

360°

RESISTIVE,

INDUCTIVE

LOADS

23

10–3

5710–2 23 5 710–1 23 5 7 100

200

0

80

100

120

140

160

180

40

60

20

23

100

57 101 23 5 7 102 23 5 7 103

200

160

140

120

60

80

20

0

160

–40 –20

20

80

140

120

40

100

180

060

40

100

# 1

# 2

IGT (25°C)

# 1 32µA

# 2

9µA

TYPICAL EXAMPLE

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(JUNCTION TO AMBIENT)

TIME (s)

GATE CURRENT VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

GATE CHARACTERISTICS

See V3

60

–20

–40

–60

0 20 40

80 100 120 140

103

7

5

3

2

102

7

5

3

2

101

7

5

3

2

100

TYPICAL EXAMPLE

GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

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