Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

BFC18 Datasheet(PDF) 2 Page - Seme LAB

Part # BFC18
Description  N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Download  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BFC18 Datasheet(HTML) 2 Page - Seme LAB

  BFC18 Datasheet HTML 1Page - Seme LAB BFC18 Datasheet HTML 2Page - Seme LAB  
Zoom Inzoom in Zoom Outzoom out
 2 / 2 page
background image
BFC18
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
71
284
1.8
325
650
1300
10
19
38
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
IS
ISM
VSD
trr
Qrr
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.]
dls / dt = 100A/µs
Continuous Source Current (Body Diode)
Pulsed Source Current1(Body Diode)
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
Characteristic
Min.
Typ.
Max. Unit
3
5
2500
70
13
LD
LS
VIsolation
CIsolation
Torque
Internal Drain Inductance (Measured From Drain Terminal to Centre of Die)
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
RMS Voltage (50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance
f = 1MHz
Maximum Torque for Device Mounting Screws and Electrical Terminations
nH
V
pF
in–lbs
Characteristic
Min.
Typ.
Max. Unit
0.18
0.05
RθJC
RθCS
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
°C/W
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
pF
nC
ns
11640 14000
2230
3120
800
1200
475
710
68
100
246
370
22
45
30
60
66
100
13
25
LAB
SEME
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.


Similar Part No. - BFC18

ManufacturerPart #DatasheetDescription
logo
Seme LAB
BFC10 SEME-LAB-BFC10 Datasheet
31Kb / 2P
   4TH GENERATION MOSFET
BFC11 SEME-LAB-BFC11 Datasheet
26Kb / 2P
   4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
BFC12 SEME-LAB-BFC12 Datasheet
31Kb / 2P
   4TH GENERATION MOSFET
BFC13 SEME-LAB-BFC13 Datasheet
26Kb / 2P
   4TH GENERATION MOSFET
BFC14 SEME-LAB-BFC14 Datasheet
31Kb / 2P
   4TH GENERATION MOSFET
More results

Similar Description - BFC18

ManufacturerPart #DatasheetDescription
logo
Seme LAB
SML100B13 SEME-LAB-SML100B13 Datasheet
21Kb / 2P
   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100H9 SEME-LAB-SML100H9 Datasheet
26Kb / 2P
   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100S13 SEME-LAB-SML100S13 Datasheet
20Kb / 2P
   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML10T75XX SEME-LAB-SML10T75XX Datasheet
19Kb / 2P
   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML120L16 SEME-LAB-SML120L16 Datasheet
20Kb / 2P
   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML20B67 SEME-LAB-SML20B67 Datasheet
21Kb / 2P
   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML20H45 SEME-LAB-SML20H45 Datasheet
26Kb / 2P
   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML30A33 SEME-LAB-SML30A33 Datasheet
20Kb / 2P
   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML40A26 SEME-LAB-SML40A26 Datasheet
20Kb / 2P
   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
logo
Advanced Power Technolo...
APT4016BN ADPOW-APT4016BN Datasheet
51Kb / 4P
   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT1001R6BN ADPOW-APT1001R6BN Datasheet
50Kb / 4P
   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
More results


Html Pages

1 2


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com