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AO4614BL Datasheet(PDF) 5 Page - Alpha & Omega Semiconductors |
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AO4614BL Datasheet(HTML) 5 Page - Alpha & Omega Semiconductors |
5 / 7 page AO4614B Symbol Min Typ Max Units BVDSS -40 V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) -1.7 -2 -3 V ID(ON) -30 A 36 45 TJ=125°C 52 65 50 63 gFS 13 S VSD -0.76 -1 V IS -2 A Ciss 940 1175 pF Coss 97 pF Crss 72 pF Rg 14 Ω Qg (-10V) 17 22 nC Qg (-4.5V) 7.9 10 nC Qgs 3.4 nC Qgd 3.2 nC tD(on) 6.2 ns tr 8.4 ns tD(off) 44.8 ns tf 41.2 ns trr 21 27 ns Qrr 14 nC 9 12 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID= -250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS= -40V, VGS=0V µA Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID= -250µA On state drain current VGS= -10V, VDS= -5V m Ω VDS= -5V, ID= -5A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance VGS= -10V, ID= -5A VGS= -4.5V, ID= -4A Diode Forward Voltage IS= -1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance DYNAMIC PARAMETERS Input Capacitance VGS=0V, VDS= -20V, f=1MHz Gate resistance Output Capacitance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS= -10V, VDS= -20V, ID= -5A VGS= -10V, VDS= -20V, RL=4Ω, RGEN=3Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Gate Source Charge Gate Drain Charge Turn-On DelayTime Total Gate Charge Body Diode Reverse Recovery Time IF= -5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/µs A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0 : Sept 2007 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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