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SM2T Datasheet(PDF) 3 Page - STMicroelectronics |
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SM2T Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 5 page SM2T series 3/5 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 25 50 75 100 125 150 Tj(°C) V R=VRM I (nA) R Fig. 6: Reverse leakage current versus junction tempera- ture (typical values). 0 50 100 150 200 250 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 S(cm²) Rth(j-a)(°C/W) Fig. 5: Thermal resistance junction to ambient versus copper surface under tab. 0.1 1.0 10.0 100.0 0 5 10 15 20 25 30 35 40 45 V (V) CL 8/20µs T j initial =25°C 10/1000µs SM2T6V8A SM2T14A SM2T18A SM2T27A I (A) PP Fig. 7: Clamping voltage versus peak pulse current (maxi- mum values). 10 100 1000 10000 1 10 100 V (V) R F=1MHz V osc=30mVRMS T j=25°C SM2T6V8A SM2T14A SM2T18A SM2T27A C(pF) Fig. 8: Junction capacitance versus reverse voltage ap- plied (typical values). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 Tamb(°C) Tamb = Ttab Printed circuit board FR4, recommended pad layout P(W) Fig. 3: Average power dissipation versus ambient tem- perature. 0.1 1.0 10.0 100.0 1000.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t (s) P S=2cm² S=0.135cm² Zth(j-a)(°C/W) Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration. |
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