Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

CHA6518 Datasheet(PDF) 1 Page - United Monolithic Semiconductors

Part No. CHA6518
Description  5 - 18 GHz High Power Amplifier
Download  8 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  UMS [United Monolithic Semiconductors]
Homepage  http://www.ums-gaas.com
Logo UMS - United Monolithic Semiconductors

CHA6518 Datasheet(HTML) 1 Page - United Monolithic Semiconductors

  CHA6518 Datasheet HTML 1Page - United Monolithic Semiconductors CHA6518 Datasheet HTML 2Page - United Monolithic Semiconductors CHA6518 Datasheet HTML 3Page - United Monolithic Semiconductors CHA6518 Datasheet HTML 4Page - United Monolithic Semiconductors CHA6518 Datasheet HTML 5Page - United Monolithic Semiconductors CHA6518 Datasheet HTML 6Page - United Monolithic Semiconductors CHA6518 Datasheet HTML 7Page - United Monolithic Semiconductors CHA6518 Datasheet HTML 8Page - United Monolithic Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
CHA6518
RoHS COMPLIANT
Ref. : DSCHA65185007 - 7 Jan 05
1/8
Specifications s ubject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 – 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6518 is a monolithic three-stage
GaAs high power amplifier designed for
wide band applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
• the backside of the chip is both RF and
DC grounded
• bond pads and back side are gold plated
for compatibility with eutectic die attach
method
and
thermosonic
or
thermocompression bonding process.
Main Features
n 0.25 µm Power pHEMT Technology
n 5 – 18 GHz Frequency Range
n 2W Output Power
n 24 dB nominal Gain
n Quiescent Bias point : 8V ; 1A
n Chip size: 5.23 mm x 3.26 mm x
0.07 mm
Vd
Vg
Vg
Vd
Vd = 8 V
Inter-
stage
Stage 1 /
Stage 2
Input
matching
Vg
Vd
Inter-
stage
Stage 2 /
Stage 3
Vg
Vd
Vg
Vd
Output
combiner
50
IN
50
OUT
Main Characteristics
Tamb = +25°C (Tamb is the back-side of the chip)
Symbol
Parameter
Min
Typ
Max
Unit
F_op
Operating frequency range
5
18
GHz
P_sat
Saturated output power
33.5
dBm
G_lin
Linear gain
24
dB


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn