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CHA6518 Datasheet(PDF) 1 Page - United Monolithic Semiconductors |
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CHA6518 Datasheet(HTML) 1 Page - United Monolithic Semiconductors |
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CHA6518 RoHS COMPLIANT Ref. : DSCHA65185007 - 7 Jan 05 1/8 Specifications s ubject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5 – 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. Main Features n 0.25 µm Power pHEMT Technology n 5 – 18 GHz Frequency Range n 2W Output Power n 24 dB nominal Gain n Quiescent Bias point : 8V ; 1A n Chip size: 5.23 mm x 3.26 mm x 0.07 mm Vd Vg Vg Vd Vd = 8 V Inter- stage Stage 1 / Stage 2 Input matching Vg Vd Inter- stage Stage 2 / Stage 3 Vg Vd Vg Vd Output combiner 50 Ω IN 50 Ω OUT Main Characteristics Tamb = +25°C (Tamb is the back-side of the chip) Symbol Parameter Min Typ Max Unit F_op Operating frequency range 5 18 GHz P_sat Saturated output power 33.5 dBm G_lin Linear gain 24 dB |
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