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CHA6518 Datasheet(PDF) 2 Page - United Monolithic Semiconductors |
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CHA6518 Datasheet(HTML) 2 Page - United Monolithic Semiconductors |
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5 – 18 GHz High Power Amplifier CHA6518 Ref. DSCHA65185007 - 7 Jan 05 2/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics Tamb = 25°C (2), Vd=8V, Ic (Quiescient) = 1A, CW biasing mode Symbol Parameter Min Typ Max Unit F_op Operating frequency 5 18 GHz G_lin_1 Linear gain 20 24 dB G_lin_T Linear gain variation versus temperature -0.045 dB/°C RL_in Input Return Loss 5.5 10 dB RL_out Output Return Loss 3.5 10 dB P_sat_1 Saturated output power (5 to 6 GHz) 32.5 33 dBm P_sat_2 Saturated output power (6 to 7 GHz) 33 34 dBm P_sat_3 Saturated output power (8 to 10 GHz) 32.5 33 dBm P_sat_4 Saturated output power (11 to 12 GHz) 32 32.5 dBm P_sat_5 Saturated output power (13 to 14 GHz) 32.5 33 dBm P_sat_6 Saturated output power (15 to 17 GHz) 33 34 dBm P_sat_7 Saturated output power (18 GHz) 32 32.5 dBm PAE_sat Power Added Efficiency in saturation 11 20 % Vd Positive supply voltage 8 V Id Power supply quiescent current (1) 1 A Vg Negative supply voltage -0.8 V Top Operating temperature range (2) -30 +80 °C NF Noise Figure 5 dB (1) This parameter is fixed by gate voltage Vg (2) The reference is the back-side of the chip Absolute Maximum Ratings (1) Symbol Parameter Values Unit Pin (2) Input continuous power 17 dBm Vd (2) Positive supply voltage without RF power 9 V Id (2) Positive supply quiescent current 1.5 A Ig (2) Gate supply current 88 mA Pd (2) Power dissipation 13.5 W Tj Junction temperature 175 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) These values are specified for Tamb = 25°C |
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