CHA5056

RoHS COMPLIANT

Ref: DSCHA50567211 - 30 Jul 07

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

17-27GHz High Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA5056 is three-stage monolithic high

power amplifier.

The backside of the chip is both RF and DC

grounds. This helps to simplify the assembly

process.

The circuit is manufactured with a power PHEMT

process, 0.15µm gate length, via holes through

the substrate.

It is supplied in chip form.

Main Features

■ Broadband performance 17-27GHz

■ 21dB Linear Gain

■ ESD protected

■ 29dBm Output Power @1dB compression

■ DC power consumption @1dB compression:

940mA@4.5V

■ Chip size: 3.15 x 2.2 x 0.1mm

Main Characteristics

Tamb. = 25°C, Vd = 4.5V

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

17

27

GHz

G

Small signal gain

21

dB

P1dB

Output power @ 1dB gain compression

29

dBm

Id1dB

Drain current @ 1dB gain compression

940

mA

ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!

Typical On Wafer Measurement

Vd1

RFin

RFout

Vg1,2

Vg3

Vd2

Vd3

Vd3

P1dB and Linear Gain versus Frequency

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

16

17

18

19

20

21

22

23

24

25

26

27

28

Frequency (GHz)