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SD57060 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. SD57060
Description  RF POWER TRANSISTORS The LdmoSTFAMILY
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SD57060 Datasheet(HTML) 1 Page - STMicroelectronics

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SD57060
RF POWER TRANSISTORS
The
LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
s
EXCELLENT THERMAL STABILITY
s
COMMON SOURCE CONFIGURATION
s
POUT = 60 W with 11.5 dB gain @ 945 MHz
s
BeO FREE PACKAGE
DESCRIPTION
The SD57060 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57060 is designed for high gain
and
broadband
performance
operating
in
common source mode at 28V. It is ideal for base
station applications requiring high linearity.
PIN CONNECTION
January 2000
ABSOLUTE MAXIMUM RATINGS (Tcase =25
oC)
Symbol
Parameter
Val ue
Uni t
V(BR)DSS
Drain Source Voltage
65
V
VGS
Gat e-Source Volt age
± 20
V
ID
Drain Current
7
A
PDISS
Power Dissipation (@ Tc= 70
oC)
108
W
Tj
Max. O perating Junction Temperature
200
oC
TSTG
Storage T emperat ure
-65 to 150
oC
THERMAL DATA (Tcase =70
oC)
Rth (j-c)
Rth(c -s)*
Junction-Case Thermal Resistance
Case-Heatsink T hermal Resist ance
1.2
0.45
oC/W
oC/W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
M243
epoxy sealed
®
ORDER CODE
BRANDING
SD57060
TSD57060
1. Drain
3.Source
2. Gate
1/8


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