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MGA-545P8 Datasheet(PDF) 3 Page - Agilent(Hewlett-Packard)

Part No. MGA-545P8
Description  1-7 GHz Medium Power Amplifier
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
Logo HP - Agilent(Hewlett-Packard)

MGA-545P8 Datasheet(HTML) 3 Page - Agilent(Hewlett-Packard)

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MGA-545P8 Electrical Specifications
Tc = 25˚C, Vd = 3.3 V, unless otherwise noted
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Gtest_sat
Gain in test circuit at saturation
f = 1.0 GHz
dB
20.0
For all frequencies refer to note [3]
f = 2.0 GHz
16.3
unless noted otherwise
f = 3.0 GHz
13.4
f = 4.0 GHz
11.6
f = 5.0 GHz
10.05
f = 5.825 GHz[1]
8.5
9.5
10.5
f = 6.0 GHz
8.7
Gtest_ss
Gain in test circuit at small signal
f = 1.0 GHz
dB
22.4
For all frequencies refer to note [3]
f = 2.0 GHz
18.6
unless noted otherwise
f = 3.0 GHz
15.9
f = 4.0 GHz
13.5
f = 5.0 GHz
12
f = 5.825 GHz[1]
10.5
11.5
13.8
f = 6.0 GHz
11.3
Psat
Pout at 2.5 dB gain compression
f = 5.825 GHz[1]
dBm
21.5
22
Ids_sat
Drain Current at saturation
f = 5.825 GHz[1]
mA
80
92
115
Idss
Drain Current at small signal
f = 5.825 GHz[1]
mA
95
135
155
P1dB
Output Power at 1 dB compression point
f = 1.0 GHz
dBm
21.5
For all frequencies refer to note [3]
f = 2.0 GHz
21.7
unless noted otherwise
f = 3.0 GHz
21.3
f = 4.0 GH
21.8
f = 5.0 GHz
21.2
f = 5.825 GHz[2]
21.0
f = 6.0 GHz
20.6
PAE
Power Added Efficiency at Psat[4]
f = 1.0 GHz
%
46.3
For all frequencies refer to note [3]
f = 2.0 GHz
46.0
unless noted otherwise
f = 3.0 GHz
48
f = 4.0 GHz
44
f = 5.0 GHz
45
f = 5.825 GHz[1]
40
46
f = 6.0 GHz
47
OIP3
Output Third Order Intercept Point [2.7 V]
f = 5.725 GHz[1]
dBm
31
34
EVM
Error Vector Magnitude
f = 5.725 GHz[2]
%
5.6
Pout = 16 dBm; 54 Mbps data rate
NF
Noise Figure
f = 1.0 GHz
dB
2.6
For all frequencies refer to note [3]
f = 2.0 GHz
2.7
unless noted otherwise.
f = 3.0 GHz
2.9
f = 4.0 GHz
3.3
f = 5.0 GHz
3.6
f = 5.825 GHz[2]
4.4
f = 6.0 GHz
5.2
Notes:
1. Measurements made on a fixed tuned production test board (figure 1), which was optimized for gain and saturated power. Excess circuit losses had
been de-embedded from actual measurement. Typical data based on at least 500 parts sample size from 3 wafer lots. Future wafers allocated to this
product may have nominal values anywhere within the upper and lower spec limits.
2. Measurement was taken on demo board at which it was tuned for maximum gain and saturated power. Refer to application note.
3. Measurement was done in a 50
Ω microstrip line, which was tuned for maximum gain and saturated power for each frequency with external double
stub tuners.
4. Power Added Efficiency at Psat is calculated using the following formula:
Id
Vdd
pa
×
=
η
Pout = Psat in watts
Pin = Input drive power in watts
Vdd = 3.3 V
Id = Ids_sat in Ampere


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