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MGA-545P8 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard) |
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MGA-545P8 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard) |
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2 MGA-545P8 Absolute Maximum Ratings[1] Parameter Units Absolute Maximum Vd Device Voltage, RF output to ground V 5.0 Pin CW RF Input Power dBm 20 θjc Thermal Resistance [2] °C/W 124 Pdiss Total Power Dissipation[3] W 0.8 Tj Junction Temperature °C 150 TSTG Storage Temperature °C –65 to 150 Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150 °C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature Tb is 25 °C. Derate 8 mW/°C for Tb > 51°C. Figure 1. Production test circuit. This circuit represents a match for maximum gain and saturated power. Figure 2. Close-up of production test board. Rogers 4350 Er = 3.48 ± 0.05, thickness = 10 mils. CONTACTOR 12 pF 10 pF 4.7 nH 0.01 µF 1000 pF 10 pF 1 2 4Tx 10 pF 0.01 µF VDD 1000 pF 10 pF 50 Ω OPEN-CIRCUITED STUB (34 mil x 72 mil) 12 pF 50 Ω 3 4 8 4.7 nH 7 RF INPUT 6 5 RF OUTPUT |
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