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STP6NK90ZFP Datasheet(PDF) 6 Page - STMicroelectronics |
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STP6NK90ZFP Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 18 page Electrical characteristics STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z 6/18 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Source-drain current Source-drain current (pulsed) 5.8 23.2 A A VSD (2) 2. Pulse width limited by safe operating area Forward on voltage ISD = 5.8 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.8 A, di/dt = 100 A/µs VDD = 36 V, Tj = 150°C (see Figure 22) 840 5880 14 ns µC A |
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