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BYT56K Datasheet(PDF) 1 Page - Vishay Siliconix |
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BYT56K Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page  BYT56. Document Number 86032 Rev. 1.6, 13-Apr-05 Vishay Semiconductors www.vishay.com 1 949588 Fast Avalanche Sinterglass Diode Features • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Very fast rectification and switching diode Mechanical Data Case: SOD-64 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 858 mg Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Part Type differentiation Package BYT56A VR = 50 V; IFAV = 3 A SOD-64 BYT56B VR = 100 V; IFAV = 3 A SOD-64 BYT56D VR = 200 V; IFAV = 3 A SOD-64 BYT56G VR = 400 V; IFAV = 3 A SOD-64 BYT56J VR = 600 V; IFAV = 3 A SOD-64 BYT56K VR = 800 V; IFAV = 3 A SOD-64 BYT56M VR = 1000 V; IFAV = 3 A SOD-64 Parameter Test condition Part Symbol Value Unit Reverse voltage = Repetitive peak reverse voltage see electrical characteristics BYT56A VR = VRRM 50 V BYT56B VR = VRRM 100 V BYT56D VR = VRRM 200 V BYT56G VR = VRRM 400 V BYT56J VR = VRRM 600 V BYT56K VR = VRRM 800 V BYT56M VR = VRRM 1000 V Peak forward surge current tp = 10 ms, half sinewave IFSM 80 A Average forward current on PC board IFAV 1.5 A l = 10 mm IFAV 3A Junction and storage temperature range Tj = Tstg - 55 to + 175 °C Non repetitive reverse avalanche energy I(BR)R = 0.4 A ER 10 mJ e2 |
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